Agilent Technologies B1500A Manuel de service Page 107

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Module 6
Low Current Measurement
6-35
z Leakage to fA levels
z Electrical connection to wafer backside
z Chuck must be guarded
Gate
Substrate
Wafer backside
Oxide
+
Low Current Leakage
Gate Oxide
Gate oxide leakage tests are complicated by the fact that there is an electrical connection to the back
of the wafer. The chuck must be insulated and guarded to get meaningful low current results. The
huge capacitance of the chuck surface would cause charging currents which would swamp out the
low level currents you are trying to measure through the oxide.
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